eprintid: 17879
rev_number: 15
eprint_status: archive
userid: 1562
dir: disk0/00/01/78/79
datestamp: 2015-03-09 10:50:43
lastmod: 2015-04-23 09:50:13
status_changed: 2015-03-09 10:50:43
type: doctoralThesis
metadata_visibility: show
creators_name: Stodtmann, Sven
title: Stochastic model and intermediate asymptotics
for charge transport in organic semiconductors
subjects: ddc-500
subjects: ddc-510
divisions: i-110400
adv_faculty: af-11
cterms_swd: Organischer Halbleiter
cterms_swd: Stochastischer Prozess
cterms_swd: Logarithmische Normalverteilung
cterms_swd: Coarse graining
cterms_swd: Gebrochene Analysis
abstract: A molecular scale model for charge transport in organic semiconductors based on quantum chemistry is presented. It is formulated as a stochastic model on the integer lattice in three dimensions. The model is treated with probabilistic methods, which allow to prove a continuous scaling limit, especially suited for intermediate regiemes, i.e. low temperatures, large energetic disorder and small devices. The scaling limit is connected to a certain integro-differential equation.
Both, the microscopic model and the scaling limit are computationally studied and it is demonstrated that the proposed model can explain dispersive effects in thin film organic semiconductor devices.
date: 2015
id_scheme: DOI
id_number: 10.11588/heidok.00017879
ppn_swb: 1656147963
own_urn: urn:nbn:de:bsz:16-heidok-178796
date_accepted: 2015-02-13
advisor: HASH(0x55fc36bbada8)
language: eng
bibsort: STODTMANNSSTOCHASTIC2015
full_text_status: public
citation:   Stodtmann, Sven  (2015) Stochastic model and intermediate asymptotics for charge transport in organic semiconductors.  [Dissertation]     
document_url: https://archiv.ub.uni-heidelberg.de/volltextserver/17879/1/Thesis_final.pdf