title: Charge Transfer and Band Formation at Metal/Organic Interfaces creator: Gerbert, David subject: ddc-530 subject: 530 Physics subject: ddc-540 subject: 540 Chemistry and allied sciences description: Both, well-defined molecular ordering and the electronic structure at metal/organic interfaces and within thin molecular films are fundamental for charge carrier injection and charge transport in organic electronic devices. This thesis presents a combined study of temperature-programmed desorption, ultraviolet and two-photon photoemission spectroscopy targeting the underlying correlation between charge transfer, hybridization and band formation. Angle-resolved photoemission measurements expose that hybridization at metal/organic interfaces implies a charge carrier density redistribution which in combination with band formation presumably enables improved charge injection. As hybrid bands crossing the Fermi energy additionally determine the transferred amount of charge, charge transfer may serve as sufficient prerequisite for underlying hybridization or band formation at metal/organic interfaces. The observation of an extended space charge region and unoccupied intermolecular hybridization in epitaxial films additionally proves increased charge carrier injection properties in thin molecular films with well-defined molecular ordering and electronic structure. date: 2017 type: Dissertation type: info:eu-repo/semantics/doctoralThesis type: NonPeerReviewed format: application/pdf identifier: https://archiv.ub.uni-heidelberg.de/volltextserverhttps://archiv.ub.uni-heidelberg.de/volltextserver/22911/1/CT%20and%20BF%20-%20David%20Gerbert.pdf identifier: DOI:10.11588/heidok.00022911 identifier: urn:nbn:de:bsz:16-heidok-229112 identifier: Gerbert, David (2017) Charge Transfer and Band Formation at Metal/Organic Interfaces. [Dissertation] relation: https://archiv.ub.uni-heidelberg.de/volltextserver/22911/ rights: info:eu-repo/semantics/openAccess rights: http://archiv.ub.uni-heidelberg.de/volltextserver/help/license_urhg.html language: eng