<> "The repository administrator has not yet configured an RDF license."^^ . <> . . "Processing and N-Doping of Polymer and Carbon Nanotube Field-Effect-Transistors"^^ . "Semiconducting, single-walled carbon nanotubes (SWCNTs) have mechanical and electronic\r\nproperties that render them a promising material for solution-processable, stretchable\r\nand flexible electronics. However, their strong tendency to form aggregates in dispersion\r\nconstitutes a large obstacle to realize the film uniformity necessary for the transition\r\nof devices from laboratory to commercial scale. The resulting inhomogeneities in film\r\nmorphology lead to an undesired spread in device performance.\r\nBased on the tailored formulation of colloidal inks via suitable solvents and additives the\r\nfirst part of this thesis presents a simple yet effective method to slow down aggregation\r\nof polymer-wrapped SWCNTs in organic solvents. This effect on aggregation by 1,10-\r\nphenanthroline as a stabilizing additive can be monitored with time-dependent absorption\r\nspectroscopy. The improved homogeneity of the SWCNT networks deposited from stabilized\r\ndispersions after several days of ink storage lead to higher charge carrier mobilities with\r\nstrongly reduced device-to-device variations compared to inks without additive.\r\nThe intrinsic ambipolarity of SWCNTs is a great disadvantage for their use in electronic\r\ncircuits as it leads to large power dissipation. While pure hole conduction can be achieved\r\nrelatively easily by doping with, for example, ambient oxygen, facilitating exclusive electron\r\nconduction represents a large challenge. A solution-processable n-dopant from the family of\r\nguanidino-functionalized aromatics (GFAs) is introduced to overcome this limitation. The\r\nresulting SWCNT network field-effect transistors (FETs) exhibit pure electron transport\r\nwith high mobility while hole transport is fully suppressed, excellent switching behavior\r\nand good operational stability. Their application potential (combined with a doped p-type\r\nFET) is highlighted by complementary inverters with very low power dissipation.\r\nThis modification of the charge transport behavior is applied to another promising solution-processable semiconductor, i.e., donor-acceptor-polymers. Doping of these polymers with\r\ntwo GFA compounds under various processing conditions improves electron injection\r\nand transport while hole transport is suppressed. Again, these transistors display good\r\nenvironmental stability under operating conditions. The extended applicability of the\r\nnewly introduced GFA dopants to different semiconductors emphasizes their potential for\r\ntransistors based on solution-processable semiconductor"^^ . "2021" . . . . . . . "Severin"^^ . "Schneider"^^ . "Severin Schneider"^^ . . . . . . "Processing and N-Doping of Polymer and Carbon Nanotube Field-Effect-Transistors (PDF)"^^ . . . "Dissertation_Severin_Schneider_Veröffentl.pdf"^^ . . . "Processing and N-Doping of Polymer and Carbon Nanotube Field-Effect-Transistors (Other)"^^ . . . . . . "indexcodes.txt"^^ . . . "Processing and N-Doping of Polymer and Carbon Nanotube Field-Effect-Transistors (Other)"^^ . . . . . . "lightbox.jpg"^^ . . . "Processing and N-Doping of Polymer and Carbon Nanotube Field-Effect-Transistors (Other)"^^ . . . . . . "preview.jpg"^^ . . . "Processing and N-Doping of Polymer and Carbon Nanotube Field-Effect-Transistors (Other)"^^ . . . . . . "medium.jpg"^^ . . . "Processing and N-Doping of Polymer and Carbon Nanotube Field-Effect-Transistors (Other)"^^ . . . . . . "small.jpg"^^ . . "HTML Summary of #30703 \n\nProcessing and N-Doping of Polymer and Carbon Nanotube Field-Effect-Transistors\n\n" . "text/html" . . . "500 Naturwissenschaften und Mathematik"@de . "500 Natural sciences and mathematics"@en . . . "540 Chemie"@de . "540 Chemistry and allied sciences"@en . .