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Abstract

High- Voltage Monolithic Active Pixel Sensors (HV-MAPS) have emerged as a promising technology for silicon tracking detectors in particle physics. HV-MAPS, selected as the foundational technology for the Mu3e Pixel Tracker and under investigation for potential implementation in future detector applications, presents unique design challenges due to its intricate structure and complex electric field distribution. This thesis presents the first comprehensive comparison of Technology Computer-Aided Design (TCAD) simulations and experimental measurements in HV-MAPS. The results show that the simulations correctly describe key experimental parameters like breakdown voltage and explain the loss of hit detection efficiency at the edges and corners of the pixels. The TCAD simulations provide insights into the behavior of the charge collection diode of MuPix8, ALTASPix, and MuPix10 prototypes, facilitating design optimizations. These studies primarily investigated the depletion zone, breakdown voltage and electric field distribution. Additionally, the characterization of MuPix10, using testbeam results, allows for the investigation of the efficiency and cluster size for different angles of incidence of the beam Furthermore, this research examines the impact of diffusion and drift on efficiency and cluster size for different voltage, resistivity, and thickness configurations. The findings of this investigation contribute to an enhanced understanding of HV-MAPS and their potential for developing more efficient and reliable silicon tracking detectors in particle physics experiments.