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Abstract

This thesis investigates the design, development, and characterization of a novel single photon avalanche diode (SPAD), fabricated in silicon-on-insulator (SOI) wafer technology, for blue and near-UV (NUV) light sensitivity. SPAD sensors are semiconductor photodetectors known for their ability to detect single photons with low noise and high detection efficiency. Initial TCAD Synopsys simulations demonstrate the design’s feasibility and allow for specifying dimensions and process parameters for the sensor. The key parameters, including doping concentrations, junction depths, and electric field distribution, are optimized. The results of these simulations indicated a breakdown voltage of 15.25 V and a photon detection probability of 44% at 405 nm of wavelength. With the production of SPAD, a proof-of-concept is possible by measuring a working quench mechanism, although the observed breakdown voltage is much higher than expected. Discrepancies between the simulated and experimental results are further investigated with additional tests, such as a light emission test and secondary ion mass spectroscopy, pointing to a mismatch in doping concentrations. This study proposes a revised design with adjusted doping concentrations, which has been simulated to evaluate its impact on performance, especially concerning the p-n junction. These refinements are expected to align the experimental results more closely with the simulations, enhancing the SPAD design for better photon detection in the UV and NUV wavelength range.